Datasheet Specifications
- Part number
- TK1R4S04PB
- Manufacturer
- Toshiba ↗
- File Size
- 471.36 KB
- Datasheet
- TK1R4S04PB-Toshiba.pdf
- Description
- Silicon N-Channel MOSFET
Description
MOSFETs Silicon N-channel MOS (U-MOS-H) TK1R4S04PB 1.Applications * Automotive * Motor Drivers * DC-DC Converters * .
Features
* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.1 mΩ (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK1R4S04PB 1: Gate 2: Drain (heatsink) 3: Source DPAK+Applications
* AutomotiveTK1R4S04PB Distributors
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