Datasheet4U.com

TK100A10N1 - Silicon N-Channel MOSFET

Toshiba

📥 Download Datasheet

TK100A10N1 Datasheet Preview — Preview of TK100A10N1 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TK100A10N1
Manufacturer	Toshiba
File Size	234.01 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK100A10N1_Toshiba.pdf

TK100A10N1 Product details

Features

(1) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TK100A10N1 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit).

📁 TK100A10N1 Similar Datasheet

TK100A06N1 - MOSFETs (Toshiba Semiconductor)
TK100A08N1 - MOSFETs (Toshiba Semiconductor)
TK100E06N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK100E08N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK100E10N1 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK100F04K3L - MOSFETs (Toshiba Semiconductor)
TK100S04N1L - Silicon N-Channel MOSFET (Toshiba Semiconductor)
TK10415 - CERAMIC SPEAKER DRIVE AMPLIFIER (TOKO)

Other Datasheets by Toshiba

TK100F04K3 - Silicon N-Channel MOSFET
TK100F06K3 - Silicon N-Channel MOSFET
TK100L60W - Silicon N-Channel MOSFET
TK10A50D - Silicon N-Channel MOSFET
TK10A50W - N-Channel MOSFET
TK10A60D - N-Channel MOSFET

Published: Nov 11, 2013 |