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TK17E80W Silicon N-Channel MOSFET

TK17E80W Description

MOSFETs Silicon N-Channel MOS (DTMOS) TK17E80W 1.Applications * Switching Voltage Regulators 2..

TK17E80W Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ. ) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 0.85 mA) 3. Packaging and Internal Circuit TK17E80W 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4.

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Silicon N-Channel MOSFET Toshiba
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