Datasheet Specifications
- Part number
- TJ80S04M3L
- Manufacturer
- Toshiba ↗
- File Size
- 264.21 KB
- Datasheet
- TJ80S04M3L_Toshiba.pdf
- Description
- Silicon P-Channel MOSFET
Description
TJ80S04M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ80S04M3L 1.Applications * * * * Automotive Motor Drivers DC-DC C.Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute MaxiTJ80S04M3L Distributors
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