Datasheet Specifications
- Part number
- TJ8S06M3L
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 272.03 KB
- Datasheet
- TJ8S06M3L-ToshibaSemiconductor.pdf
- Description
- P-Channel MOSFET
Description
MOSFETs Silicon P-Channel MOS (U-MOS) TJ8S06M3L 1.Applications * Automotive * Motor Drivers * DC-DC Converters * Swi.
Features
* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ. ) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TJ8S06M3L DPAK+ 1: Gate 2: Drain (heatsApplications
* AutomotiveTJ8S06M3L Distributors
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