Datasheet Specifications
- Part number
- TIM7785-8SL
- Manufacturer
- Toshiba ↗
- File Size
- 319.66 KB
- Datasheet
- TIM7785-8SL-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 6.0dB at 7.7GHz to 8.5GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 28.5dBm Single Carrier Level. MICROWAVE POWER GaAs FET TIM7785-8SL RF PERFORMANCE SPECIFICATTIM7785-8SL Distributors
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