Datasheet Specifications
- Part number
- TIM7179-30UL
- Manufacturer
- Toshiba ↗
- File Size
- 277.58 KB
- Datasheet
- TIM7179-30UL-Toshiba.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 7.1GHz to 7.9GHz ･HIGH GAIN G1dB= 8.5dB at 7.1GHz to 7.9GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7179-30UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point PoweTIM7179-30UL Distributors
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