Datasheet4U Logo Datasheet4U.com

TC58NYG2S0HBAI6 Datasheet - Toshiba

TC58NYG2S0HBAI6-Toshiba.pdf

Preview of TC58NYG2S0HBAI6 PDF
TC58NYG2S0HBAI6 Datasheet Preview Page 2 TC58NYG2S0HBAI6 Datasheet Preview Page 3

Datasheet Details

Part number:

TC58NYG2S0HBAI6

Manufacturer:

Toshiba ↗

File Size:

489.64 KB

Description:

4 gbit (512m x 8 bit) cmos nand e2prom.

TC58NYG2S0HBAI6, 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

The TC58NYG2S0HBAI6 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks.

The device has two 4352-byte static registers which allow program and read data to be transferred betwe

📁 Related Datasheet

📌 All Tags

Toshiba TC58NYG2S0HBAI6-like datasheet