TC518512FTL-70 Datasheet PDF (SILICON GATE CMOS PSEUDO STATIC RAM)

TC518512FTL-70 - SILICON GATE CMOS PSEUDO STATIC RAM

Download the TC518512FTL-70 datasheet PDF (TC518512PL-70 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon gate cmos pseudo static ram.

Description

The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.

The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!:!!gh speed and low power storage.

Features

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIVI/ thus simplifying the microprocessor interface. The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small outline package (forward type, reverse type). Features.
Organization: 524,288 words x 8 bits.
Single 5V power supply.
Fast access time TC518512PL Family tCEA IT Access T.

Datasheet Details

Part number	TC518512FTL-70
Manufacturer	Toshiba Electronic Devices & Storage
File Size	285.64 KB
Description	SILICON GATE CMOS PSEUDO STATIC RAM
Datasheet	TC518512FTL-70 Datasheet

📁 Similar Datasheet

TC51 - 1uA Voltage Detector (Microchip)

TC510 - Precision Analog Front Ends (Microchip)

TC510 - (TC5xx) PRECISION ANALOG FRONT ENDS (TelCom Semiconductor)

TC511402 - 1048576 x 4 BIT DYNAMIC RAM (Toshiba Semiconductor)

TC511402AJ-60 - DRAM (Toshiba Semiconductor)

TC511402AP-60 - DRAM (Toshiba Semiconductor)

TC511402ASJ-60 - DRAM (Toshiba Semiconductor)

TC511402AZ-60 - DRAM (Toshiba Semiconductor)

TC5117400BSJ - DYNAMIC RAM (Toshiba Semiconductor)

TC5117400BSJ-60 - DRAM (Toshiba Semiconductor)

Full PDF Text Transcription

Click to expand full text

TOSHIBA TC518512PL/FL/FIL/TRL-70/00/10 SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!:!!gh speed and low power storage. The TC518512PL operates from a single 5V power supply. Refreshing is supported by a refresh (OEIRFSH) input which enables two types of refreshing - auto refresh and self refresh. The TC518512PL features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RIVI/ thus simplifying the microprocessor interface. The TC518512PL is available in a 32-pin, 0.

Published: Feb 16, 2017 |