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TC518512FTL-10DR - SILICON GATE CMOS PSEUDO STATIC RAM

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Toshiba

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TC518512FTL-10DR SILICON GATE CMOS PSEUDO STATIC RAM by Toshiba - Datasheet Preview — Datasheet preview – TC518512FTL-10DR

Datasheet Details

Part number	TC518512FTL-10DR
Manufacturer	Toshiba
File Size	315.88 KB
Description	SILICON GATE CMOS PSEUDO STATIC RAM
Datasheet	TC518512FTL-10DR Datasheet
Note	This datasheet PDF includes multiple part numbers: TC518512FTL-10DR, TC518512PL-70DR. Please refer to the document for exact specifications by model.
Additional preview pages of the TC518512FTL-10DR datasheet.

Product details

Description

The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.

Features

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a thin small outline package (forward type, reverse type). Features.
Organization: 524,288 words x 8 bits.
Single 5V p.

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Other Datasheets by Toshiba

TC518512FTL-10 - SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-10LT - SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-10LV - SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-70 - SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-70DR - SILICON GATE CMOS PSEUDO STATIC RAM
TC518512FTL-70LT - SILICON GATE CMOS PSEUDO STATIC RAM

Published: Feb 15, 2017 |