• Part: S1376
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 77.73 KB
Download S1376 Datasheet PDF
Toshiba
S1376
FEATURES . plementary to S1375 Unit in mm 9.9MAX. 03.2±O.2 W- -$ a. m 0.6 6 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL v CBO VCEO Vebo ic IB ?C TJ T stg RATING -80 -80 -5 -750 -500 1.5 150 -55-150 UNIT V V V m A m A W °C °C Tr-rp; 4- ',3- ,9, 9 MAX. 1. EMITTER 2. BASE 3- COLLECTOR (HEAT SINK) JEDEC TOSHIBA Weight : 1.4g ELECTRICAL CHARACTERISTICS (Ta=25 C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage ICB0 x EB0 V CB=-30V, I E=0 V EB =-5V, I C =0 v (BR) CEO I c =-10m A, Ib=0 DC Current Gain h FE(l) h FE(2) Collector-Emitter Saturation Voltage v CE(sat) Base-Emitter Voltage Transition...