• Part: S1377
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 89.50 KB
Download S1377 Datasheet PDF
Toshiba
S1377
FEATURES . High Collector to Emitter Breakdown Voltage V CEO=250V Unit in mm 9.9MAX. 03.2+0.2 i? n. 1.2 TTTI MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL V CBO v CEO v EBO ic IB T i T stg RATING 250 250 500 250 1.5 6.25 150 -55-150 C1.6 UNIT V V V m A m A °c °c Tt;r : ; 9. 9 MAX. 1. EMITTER 2. BASE 3. COLLECTOR (HEAT SINK) JEDEC EIA J TOSHIBA 2-10Dli Weight : 1.4g ELECTRICAL CHARACTERISTICS (Ta=25 c) CHARACTERISTIC Collector Cut-off...