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MG25Q2YS40

The MG25Q2YS40 is Silicon N Channel IGBT GTR Module designed by Toshiba.

Product Overview

Toshiba

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MG25Q2YS40 Silicon N Channel IGBT GTR Module by Toshiba - Datasheet Preview — Datasheet preview – MG25Q2YS40

Datasheet Details

Part number	MG25Q2YS40
Manufacturer	Toshiba
File Size	597.15 KB
Description	Silicon N Channel IGBT GTR Module
Datasheet	MG25Q2YS40_ToshibaSemiconductor.pdf
Additional preview pages of the MG25Q2YS40 datasheet.

Product details

Features

High input impedance.
High speed:.
Low saturation voltage:.
Enhancement mode tf = 0.5µs (Max. ) trr = 0.5µs (Max. ) VCE (sat)= 4.0V (Max. ).
The electrodes are isolated from case.
Includes a complete half bridge card in one package Maximum Ratings (Ta = 25°C).

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Published: Apr 29, 2005 |