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MG25Q6ES42

The MG25Q6ES42 is Silicon N Channel IGBT GTR Module designed by Toshiba.

Product Overview

Toshiba

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MG25Q6ES42 Silicon N Channel IGBT GTR Module by Toshiba - Datasheet Preview — Datasheet preview – MG25Q6ES42

Datasheet Details

Part number	MG25Q6ES42
Manufacturer	Toshiba
File Size	595.24 KB
Description	Silicon N Channel IGBT GTR Module
Datasheet	MG25Q6ES42_ToshibaSemiconductor.pdf
Additional preview pages of the MG25Q6ES42 datasheet.

Product details

Features

6 IGBTs are built into 1 package.
High speed:.
Low saturation voltage:.
Enhancement mode tf = 0.5µs (Max. ) trr = 0.5µs (Max. ) VCE (sat) = 4.0V (Max. ).
The electrodes are isolated from case Maximum Ratings (Ta = 25°C).

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Published: Apr 29, 2005 |