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MG25Q6ES42 - Silicon N Channel IGBT GTR Module

Features

  • 6 IGBTs are built into 1 package.
  • High speed:.
  • Low saturation voltage:.
  • Enhancement mode tf = 0.5µs (Max. ) trr = 0.5µs (Max. ) VCE (sat) = 4.0V (Max. ).
  • The electrodes are isolated from case Maximum Ratings (Ta = 25°C).

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Datasheet Details

Part number MG25Q6ES42
Manufacturer Toshiba
File Size 595.24 KB
Description Silicon N Channel IGBT GTR Module
Datasheet download datasheet MG25Q6ES42 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: • Low saturation voltage: • Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat) = 4.0V (Max.
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