Datasheet4U Logo Datasheet4U.com

MG200Q2YS50 Datasheet - Toshiba

MG200Q2YS50 Silicon N Channel IGBT GTR Module

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max.) @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max.) l Enhancement-mode l Includes a complate half bridge in one ackage. l The electrodes are isolated from case. Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 430g Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate.

MG200Q2YS50 Datasheet (251.24 KB)

Preview of MG200Q2YS50 PDF
MG200Q2YS50 Datasheet Preview Page 2 MG200Q2YS50 Datasheet Preview Page 3

Datasheet Details

Part number:

MG200Q2YS50

Manufacturer:

Toshiba ↗

File Size:

251.24 KB

Description:

Silicon n channel igbt gtr module.

📁 Related Datasheet

MG200Q2YS40 Silicon N Channel IGBT GTR Module (Toshiba)

MG200Q2YS60A High Power Switching Applications Motor Control Applications (Toshiba Semiconductor)

MG200Q2YS60A High Power Switching Applications Motor Control Applications (Mitsubishi Electric)

MG200Q2YS65H IGBT Module Silicon N Channel IGBT (Toshiba Semiconductor)

MG200Q1JS40 Silicon N Channel IGBT GTR Module (Toshiba)

MG200Q1UK1 NPN (ETC)

MG200Q1UK1 TRANSISTOR MODULES (ETC)

MG200Q1US41 Silicon N Channel IGBT GTR Module (Toshiba)

TAGS

MG200Q2YS50 Silicon Channel IGBT GTR Module Toshiba

MG200Q2YS50 Distributor