MG200Q1US51 Datasheet (Toshiba) - Silicon N Channel IGBT GTR Module

MG200Q1US51, Silicon N Channel IGBT GTR Module

TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max.) @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.) l Enhancement-mode l The electrodes are isolated from case.

Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Weight: 465g Characteristic Symbol Collector-emitter voltage Gate-emitter voltage Collector current DC 1