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K4110 2SK4110

K4110 Description

2SK4110 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4110 Switching Regulator Applications * * * <.

K4110 Features

* s. Do not use Product for Unintende

K4110 Applications

* Low drain-source ON resistance: RDS (ON) = 0.9 Ω (typ. ) High forward transfer admittance: |Yfs| = 5.0 S (typ. ) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta

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2SK4110 Toshiba
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