K4115 Datasheet - Toshiba Semiconductor

K4115 2SK4115

2SK4115 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSⅣ) 2SK4115 Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) 3.3max. 2.0 9.0 20.0±0.3 2.0 Ф3.2±0.2 1.0 4.5 Unit: mm 15.9max. Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Characteristic Drain-source.

K4115_ToshibaSemiconductor.pdf