K170 FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier)

Toshiba

Description

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications Unit: mm * Recommende.

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Datasheet Specifications

Part number: K170
Manufacturer: Toshiba ↗
File Size: 330.62 KB
Datasheet: K170_ToshibaSemiconductor.pdf
Description: FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier)

Applications

* Unit: mm
* Recommended for first stages of EQ and M. C. head amplifiers.
* High |Yfs|: |Yfs| = 22 mS (typ. ) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
* High breakdown voltage: VGDS =
* 40 V
* Low noise: En = 0.95 nV/Hz1/2 (typ. ) (VDS = 10 V, ID = 1 mA, f = 1 kHz)

K170 Distributors

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K170 FET Silicon Channel Junction Typefor Low Noise Audio Amplifier Toshiba

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