K10A60DR, K10A60D N-Channel MOSFET

Toshiba

Description

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications * Low drain-source ON-.

📥 Download Datasheet

K10A60DR Datasheet Preview — This datasheet PDF includes multiple part numbers: K10A60DR, K10A60D. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: K10A60DR, K10A60D
Manufacturer: Toshiba ↗
File Size: 202.57 KB
Datasheet: K10A60D_Toshiba.pdf
Description: N-Channel MOSFET
Note: This datasheet PDF includes multiple part numbers: K10A60DR, K10A60D.
Please refer to the document for exact specifications by model.

Applications

* Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ. )
* High forward transfer admittance: |Yfs| = 6.0S (typ. )
* Low leakage current: IDSS = 10 μA (VDS = 600 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta =

K10A60DR Distributors

📁 Related Datasheet

K10A60W K10 K1000MA600 K1000MA650 K1000ME600 K1000ME650

📌 All Tags

K10A60D N-Channel MOSFET Toshiba

Toshiba K10A60DR-like datasheet