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K10A60DR, K10A60D N-Channel MOSFET

K10A60DR Description

TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications * Low drain-source ON-.

K10A60DR Applications

* Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ. )
* High forward transfer admittance: |Yfs| = 6.0S (typ. )
* Low leakage current: IDSS = 10 μA (VDS = 600 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta =

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This datasheet PDF includes multiple part numbers: K10A60DR, K10A60D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K10A60DR, K10A60D
Manufacturer
Toshiba ↗
File Size
202.57 KB
Datasheet
K10A60D_Toshiba.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: K10A60DR, K10A60D.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET Toshiba
Toshiba K10A60DR-like datasheet