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K10A50D TK10A50D

K10A50D Description

TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A50D Switching Regulator Applications * * * .

K10A50D Features

* hips and other transp

K10A50D Applications

* Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ. ) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ. ) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Rating

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TK10A50D Toshiba
Toshiba K10A50D-like datasheet