Datasheet Specifications
- Part number
- HN4C51J
- Manufacturer
- Toshiba ↗
- File Size
- 328.40 KB
- Datasheet
- HN4C51J-Toshiba.pdf
- Description
- Silicon NPN Epitaxial Type Transistor
Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C51J Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = 120.
Applications
* z High voltage : VCEO = 120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ. ) z Low noise : NF = 1dB(typ. ) HN4C51J Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VHN4C51J Distributors
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