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HN1D05FE Silicon Epitaxial Planar Type Diode

HN1D05FE Description

Switching Diodes Silicon Epitaxial Planar HN1D05FE 1.Applications * High-Voltage Switching 2..

HN1D05FE Features

* (1) Small package (2) Low reverse current: IR(2) = 0.1 µA (max) (3) Low forward voltage: VF(2) = 1.0 V (typ. ) (4) Fast reverse recovery time: trr = 0.5 µs (typ. ) (5) Small total capacitance: Ct = 4.3 pF (typ. ) 3. Packaging and Internal Circuit ES6 HN1D05FE 1: Anode1 2: N. C. 3: Cathode2 4: Anode2 5:

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Datasheet Details

Part number
HN1D05FE
Manufacturer
Toshiba ↗
File Size
213.32 KB
Datasheet
HN1D05FE-Toshiba.pdf
Description
Silicon Epitaxial Planar Type Diode

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Silicon Epitaxial Planar Type Diode Toshiba
Toshiba HN1D05FE-like datasheet