GT20J341 - Silicon N-Channel IGBT

Product Overview

Toshiba

Part number	GT20J341
Manufacturer	Toshiba
File Size	246.21 KB
Description	Silicon N-Channel IGBT
Datasheet	GT20J341 Datasheet
Additional preview pages of the GT20J341 datasheet.

(1) (2) (3) Sixth generation Low saturation voltage: VCE(sat) = 1.5 V (typ. ) (IC = 20 A) FRD included between emitter and collector 3. Packaging and Internal Circuit 1: Gate 2: Collector 3: Emitter TO-220SIS 1 2012-04-26 Rev.2.0 Free Datasheet http://www. datasheet4u. com/ GT20J341 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector current (pulsed) Dio.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Nov 11, 2013 |