Datasheet Details
Part number:
GT20J321
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
522.36 KB
Description:
Silicon n-channel igbt.
GT20J321_ToshibaSemiconductor.pdf
GT20J321_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT20J321
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
522.36 KB
Description:
Silicon n-channel igbt.
www.DataSheet4U.com GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.04 µs (typ.) Low switching loss : Eon = 0.40 mJ (typ.) : Eoff = 0.43 mJ (typ.) Low saturation voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and
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