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C3326 2SC3326

C3326 Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications 2SC3326 Unit: mm * AEC-Q101 Qualified .

C3326 Applications

* 2SC3326 Unit: mm
* AEC-Q101 Qualified (Note1).
* High emitter-base voltage: VEBO = 25 V
* High reverse hFE: Reverse hFE = 150 (typ. ) (VCE =
* 2 V, IC =
* 4 mA)
* Low on resistance: RON = 1 Ω (typ. ) (IB = 5 mA)
* High DC current gain: hFE = 200 to 1200
* Small

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2SC3326 Toshiba
Toshiba C3326-like datasheet