Datasheet Specifications
- Part number
- 30J322
- Manufacturer
- Toshiba ↗
- File Size
- 422.05 KB
- Datasheet
- 30J322-Toshiba.pdf
- Description
- Silicon N-Channel IGBT
Description
GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLIC.
Applications
* z FRD included between emitter and collector z Enhancement mode type z High speed : tf = 0.25μs (Typ. ) (IC = 50A) z Low saturation voltage : VCE (sat) = 2.1V (Typ. ) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Unit: mm CHARACTERISTIC SYMBOL RATING UNIT Collector30J322 Distributors
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