30J301 Silicon N-Channel IGBT

Toshiba

Description

GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit.

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Datasheet Specifications

Part number: 30J301
Manufacturer: Toshiba ↗
File Size: 316.32 KB
Datasheet: 30J301-Toshiba.pdf
Description: Silicon N-Channel IGBT

Applications

* MOTOR CONTROL APPLICATIONS Unit: mm l The 3rd Generation l Enhancement
* Mode l High Speed : tf = 0.30µs (Max. ) l Low Saturation Voltage : VCE (sat) = 2.7V (Max. ) l FRD included between Emitter and Collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector
* Emitter Voltage

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30J301 Silicon N-Channel IGBT Toshiba

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