30J126 Silicon N-Channel IGBT

Toshiba

Description

GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications Uni.

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Datasheet Specifications

Part number: 30J126
Manufacturer: Toshiba ↗
File Size: 208.62 KB
Datasheet: 30J126-Toshiba.pdf
Description: Silicon N-Channel IGBT

Applications

* Fast Switching Applications Unit: mm
* Fourth-generation IGBT
* Enhancement mode type
* Fast switching (FS): High speed: tf = 0.05 μs (typ. ) Low switching loss : Eon = 1.00 mJ (typ. ) : Eoff = 0.80 mJ (typ. )
* Low saturation voltage: VCE (sat) = 1.95 V (typ. ) Absolu

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30J126 Silicon N-Channel IGBT Toshiba

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