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2SK357 - N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	2SK357
Manufacturer	Toshiba
File Size	130.52 KB
Description	N-Channel MOSFET
Datasheet	2SK357_Toshiba.pdf

2SK357 Product details

Features

. Low Drain-Source ON Resistance : RdS(ON)=°- 6Q (Typ. . High Forward Transfer Admittance: 1 Yf s l =1 . 8S (Typ . . High Drain Current : Iop=8A(Max. ) . Low Leakage Current: lGSS =±100nA(Max. ) @ Vqq=±20V . Enhancement-Mode I DSS =lmA(Max. ) @ V D s=150V : V t h=l . 5 ~ 3. 5V @ lD=lmA.

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Published: Sep 15, 2005 |