2SD1425 - Silicon NPN Transistor

Toshiba

Datasheet Details

. High Voltage : VCBO=1500V . Low Saturation Voltage : VCE(sat)=5V(Typ. ) (I C=2A, IB=0.6A) . High Speed : tf =1. 0/is(Max. ) (IcP=2A, lBl(end)=0.6A) . Built-in Damper Type . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 03.6x0.2.

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Published: Feb 5, 2006 |