2SD1406 - Silicon NPN Transistor

Toshiba

Datasheet Details

. High DC Current Gain : hpE=300(Max. ) (V CE=5V, I c=0.
5A) . Low Saturation Voltage ' VCE (sat)=l-0V(Max. )(I c=3A, I B=0.3A) . High Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SB1015.

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Published: Jun 1, 2024 |