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2SC2102 - SILICON NPN TRANSISTOR

Features

  • : . Output Power : Po=15W (Min. ) ( f=l 75MHz, Vcc=12.5V, Pi=1.3W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30; 1 VSWR @ Vcc=15V, Pi= 1.3W, f=175MHz Unit in mm.

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Datasheet Details

Part number 2SC2102
Manufacturer Toshiba
File Size 62.25 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 2SC2102 Datasheet

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Full PDF Text Transcription

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1 SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : Po=15W (Min.) ( f=l 75MHz, Vcc=12.5V, Pi=1.3W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30; 1 VSWR @ Vcc=15V, Pi= 1.3W, f=175MHz Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 35 Collector-Emitter Voltage VCEO 18 Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) v EBO ic PC 3.5 3.5 35 1. EMITTER 2. BASE 3. EMITTER 4. COLLECTOR Junction Temperature 175 Storage Temperature Range T stg -65-175 °C TOSHIBA 2-10G1A ELECTRICAL CHARACTERISTICS (Ta=25 °C) Mounting Kit No. AC57 Weight : 3 . 3g CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX.
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