1SS419 Datasheet - Toshiba

1SS419, Silicon Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications 1SS419 Unit: mm CATHODE MARK * Small package.

Applications

* 1SS419 Unit: mm CATHODE MARK
* Small package
* Low forward voltage: VF (3) = 0.56 V (typ. )
* Low reverse current: IR = 5 μA (max) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V sESC Reverse voltage V

1SS419-Toshiba.pdf