1SS362FV Datasheet - Toshiba

1SS362FV, Silicon Epitaxial Planar Type Diode

0.5± 0.1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications * AEC-Q101 qualified (Note 1) * Smal.

Applications

* AEC-Q101 qualified (Note 1)
* Small package
* Excellent in forward current and forward voltage characteristics: VF (3) = 0.97 V (typ. )
* Fast reverse recovery time: trr = 1.6 ns (typ. )
* Small total capacitance: CT = 0.9 pF (typ. ) Note1: For detail information, please c

1SS362FV-Toshiba.pdf