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1SS360F - Diode

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360F Ultra High Speed Switching Applications 1SS360F Unit in mm l Small package : 1608 Flat lead l Excellent in forward current and forward voltage characteristics : VF (3) = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 85 80 300 (*) 100 (*) 2 (*) 100 Junction temperature Tj 125 Storage temperature range Tstg −55~125 (*) Unit rating. Total rating = unit rating × 1.
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