1SS360F Datasheet - Toshiba Semiconductor

1SS360F, Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360F Ultra High Speed Switching Applications 1SS360F Unit in mm l Small package : 1608 Flat lead l .

Applications

* 1SS360F Unit in mm l Small package : 1608 Flat lead l Excellent in forward current and forward voltage characteristics : VF (3) = 0.92V (typ. ) l Fast reverse recovery time : trr = 1.6ns (typ. ) l Small total capacitance : CT = 2.2pF (typ. ) Maximum Ratings (Ta = 25°C) Characteristic Symbol

1SS360F_ToshibaSemiconductor.pdf