TPCP8205-H - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TPCP8205-H
Manufacturer	Toshiba ↗ Semiconductor
File Size	261.16 KB
Description	Silicon N-Channel MOSFET
Datasheet	TPCP8205-H-ToshibaSemiconductor.pdf

(1) Small footprint due to a small and thin package (2) High-speed switching (3) Low drain-source on-resistance: RDS(ON) = 20 mΩ (typ. )(VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPCP8205-H PS-8 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 ©2015 Toshiba Corporation 1 Start of commercial production 2010-03 2015-10-21 Rev.5.0 TPCP8205-H 4.

📁 TPCP8205-H Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Aug 27, 2014 |