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TPCP8512 Silicon NPN Transistor

TPCP8512 Description

Bipolar Transistors Silicon NPN Epitaxial Type TPCP8512 TPCP8512 1.Applications * High-Speed Switching * DC-DC Converters 2.Featur.

TPCP8512 Features

* (1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC = 0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 0.21 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching: tf = 120 ns (typ. ) (IC = 1.6 A) 3. Packaging and Internal Circuit PS-8 1. Emitter 2. Emitter 3. Emitter 4. Ba

TPCP8512 Applications

* High-Speed Switching

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Silicon NPN Transistor Toshiba
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