TPCP8110 - Silicon P-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TPCP8110
Manufacturer	Toshiba ↗ Semiconductor
File Size	256.69 KB
Description	Silicon P-Channel MOSFET
Datasheet	TPCP8110-ToshibaSemiconductor.pdf

(1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge: QSW = 14 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 30.4 mΩ (typ. ) (VGS = -10 V) (5) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (6) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCP8110 PS-8 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2013-01 2016-02-23 Rev.3.0 TPCP8110 4. Absolute Maximum.

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Published: Aug 27, 2014 |