TPCP8009 - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TPCP8009
Manufacturer	Toshiba ↗ Semiconductor
File Size	255.19 KB
Description	Silicon N-Channel MOSFET
Datasheet	TPCP8009-ToshibaSemiconductor.pdf

(1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 9.6 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 9.5 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8009 PS-8 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-08 2016-02-23 Rev.9.0 TPCP8009 4. Absolute Maximum Rating.

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Published: Aug 27, 2014 |