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TPCF8003 MOSFET

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Description

www.DataSheet4U.com TPCF8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPCF8003 Notebook PC Applications Portable Equipme.

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Features

* n life, bodily injury, serious property damage or serious public impact (“Unintended Use”).

Applications

* Portable Equipment Applications
* Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) =14 mΩ (typ. ) (VGS= 4.5V) Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA)

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