Datasheet Specifications
- Part number
- TPC8132
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 260.54 KB
- Datasheet
- TPC8132-ToshibaSemiconductor.pdf
- Description
- Silicon P-Channel MOSFET
Description
TPC8132 MOSFETs Silicon P-Channel MOS (U-MOS) TPC8132 1.Applications * * Lithium-Ion Secondary Batteries Power Management Switches .Features
* (1) (2) (3) (4) Small footprint due to small and thin package Low drain-source on-resistance: RDS(ON) = 20 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: SoTPC8132 Distributors
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