Datasheet4U Logo Datasheet4U.com

TPC8106-H - P-Channel MOSFET

TPC8106-H Description

TPC8106-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U *MOSII) TPC8106 *H High Speed and High Efficiency DC.

TPC8106-H Applications

* Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Low drain
* source ON resistance : Qg = 52 nC (typ. ) : RDS (ON) = 14 mΩ (typ. ) Unit: mm High forward transfer admittance : |Yfs| = 16.6 S (typ. ) Low le

📥 Download Datasheet

Preview of TPC8106-H PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • TPC8104-H - P-Channel 30V MOSFET (VBsemi)
  • TPC8125 - Silicon P-Channel MOSFET (Toshiba)
  • TPC8126 - MOSFET (Toshiba)
  • TPC8127 - MOSFET (Toshiba)
  • TPC8129 - Silicon P-Channel MOSFET (Toshiba)
  • TPC816 - 4 PIN DIP Phototransistor Photocoupler (Taiwan Semiconductor)
  • TPC817 - 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER (Taiwan Semiconductor)
  • TPC8.2A - Transient Voltage Suppressors (Vishay)

📌 All Tags

Toshiba Semiconductor TPC8106-H-like datasheet