TK8S06K3L - Silicon N-channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK8S06K3L
Manufacturer	Toshiba ↗ Semiconductor
File Size	239.78 KB
Description	Silicon N-channel MOSFET
Datasheet	TK8S06K3L-ToshibaSemiconductor.pdf

(1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 1 2011-03 2014-08-04 Rev.4.0 TK8S06K3L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltag.

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Published: Sep 5, 2014 |