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TK80X04K3 Silicon N-Channel MOSFET

TK80X04K3 Description

TK80X04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK80X04K3 9.2 MAX.7.0 ± 0.2 4 0.8 MAX.2.5 0.7 MAX.9.2 MAX.2.0 1.5 2.

TK80X04K3 Features

* n or failure of which may cau

TK80X04K3 Applications

* Motor Drive Applications
* Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ. ) High forward transfer admittance: |Yfs| = 150 S (typ. ) Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

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Silicon N-Channel MOSFET Toshiba Semiconductor
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