Datasheet Specifications
- Part number
- TK56E12N1
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 255.80 KB
- Datasheet
- TK56E12N1-ToshibaSemiconductor.pdf
- Description
- Silicon N-Channel MOSFET
Description
TK56E12N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK56E12N1 1.Applications * Switching Voltage Regulators 2..
Features
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute MaximumTK56E12N1 Distributors
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