TK50P03M1 - Silicon N-Channel MOSFET

Name: TK50P03M1
SKU: TK50P03M1-679430

Toshiba Semiconductor

The TK50P03M1 by Toshiba Semiconductor is a Silicon N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	TK50P03M1
Manufacturer	Toshiba Semiconductor
File Size	304.02 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK50P03M1_ToshibaSemiconductor.pdf
Additional preview pages of the TK50P03M1 datasheet.

(1) High-speed switching (2) Low gate charge: QSW = 8.2 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TK50P03M1 DPAK 1: Gate 2: Drain (heatsink) 3: Source ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2009-02 2019-04-19 Rev.5.0 TK50P03M1 4. Absolute.

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Published: Jul 21, 2010 |