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TK50X15J1 Datasheet - Toshiba Semiconductor

TK50X15J1 N-Channel MOSFET

TK50X15J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK50X15J1 DC-DC Converters Low drain-source ON-resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 90 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 150 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Dr.

TK50X15J1_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TK50X15J1

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

204.05 KB

Description:

N-channel mosfet.

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TK50X15J1 TK50X15J1 N-Channel MOSFET Toshiba Semiconductor