TK4P60DB Silicon N-Channel MOSFET

Toshiba Semiconductor

Description

MOSFETs Silicon N-Channel MOS (π-MOS) TK4P60DB 1.Applications * Switching Voltage Regulators 2..

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Datasheet Specifications

Part number: TK4P60DB
Manufacturer: Toshiba ↗ Semiconductor
File Size: 835.15 KB
Datasheet: TK4P60DB-ToshibaSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Features

* (1) Low drain-source on-resistance : RDS(ON) = 1.6 Ω (typ. ) (2) High forward transfer admittance : |Yfs| = 2.2 S (typ. ) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4P60DB DPAK 1: G

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TK4P60DB Silicon N-Channel MOSFET Toshiba Semiconductor

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