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TK4P55DA Silicon N-Channel MOSFET

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Description

MOSFETs Silicon N-Channel MOS (π-MOS) TK4P55DA 1.Applications * Switching Voltage Regulators 2..

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Features

* (1) Low drain-source on-resistance : RDS(ON) = 2.0 Ω (typ. ) (2) High forward transfer admittance : |Yfs| = 1.8 S (typ. ) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 550V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4P55DA DPAK 1: Ga

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